| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-gain semiconductor device.SOLUTION: A metal ground surface is formed on the side of a substrate immediately below at least a partial region of a shield plate electrode, and the shield plate electrode short-circuited by a source electrode is arranged in the vicinity of a drain electrode. Thereby, an active layer between the gate and the drain is interposed by the ground surface from top and bottom. Thereby, a region between the drain and the gate is electrically shielded, capacitor Cgd between the gate and the drain is reduced, and increase in capacitor Cgs between the gate and the source is suppressed. |
