| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of separately forming a fin-type transistor and a plane-type transistor.SOLUTION: A method for manufacturing a semiconductor device according to an embodiment comprises the steps of: forming a lower mask film on a semiconductor substrate; forming a barrier film in a first region; forming an upper mask film; removing the upper mask member from the first region and leaving the lower mask member, and removing the upper mask member and the lower mask member from the second region by performing etching under the condition that the etching speeds of the upper mask member and the lower mask member become faster than the etching speed of a barrier member; forming a conductive film; and selectively removing the conductive film by performing etching under the condition that the etching speed of the conductive film becomes faster than the etching speed of the lower mask member. |
