| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which prevents deterioration in properties due to BPD.SOLUTION: A method of manufacturing a semiconductor storage device according to an embodiment comprises: preparing a hexagonal silicon carbide substrate, injecting ions into the silicon carbide substrate, forming a silicon carbide film on the silicon carbide substrate into which ions are injected by epitaxial growth, and forming a pn junction region in the silicon carbide film. |
