发明名称 |
METHOD OF FABRICATING ERASABLE PROGRAMMABLE SINGLE-PLOY NONVOLATILE MEMORY |
摘要 |
The present invention provides method of fabricating an erasable programmable single-poly nonvolatile memory, comprising steps of: defining a first area and a second area in a first type substrate; forming a second type well region in the first area; forming a first gate oxide layer and a second gate oxide layer covered on a surface of the first area, wherein the second gate oxide layer is extended to and is adjacent to the second area; forming a DDD region in the second area; etching a portion of the second gate oxide layer above the second area; forming two polysilicon gates covered on the first and the second gate oxide layers; and defining a second type doped region in the DDD region and a first type doped regions in the second type well region. |
申请公布号 |
US2013237048(A1) |
申请公布日期 |
2013.09.12 |
申请号 |
US201213602404 |
申请日期 |
2012.09.04 |
申请人 |
HSU TE-HSUN;CHEN HSIN-MING;CHING WEN-HAO;CHEN WEI-REN;EMEMORY TECHNOLOGY INC. |
发明人 |
HSU TE-HSUN;CHEN HSIN-MING;CHING WEN-HAO;CHEN WEI-REN |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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