发明名称 |
QUANTUM WELL MOSFET CHANNELS HAVING LATTICE MISMATCH WITH METAL SOURCE/DRAINS, AND CONFORMAL REGROWTH SOURCE/DRAINS |
摘要 |
Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well.
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申请公布号 |
US2013234113(A1) |
申请公布日期 |
2013.09.12 |
申请号 |
US201313870184 |
申请日期 |
2013.04.25 |
申请人 |
MAJHI PRASHANT;HUDAIT MANTU K.;KAVALIEROS JACK T.;PILLARISETTY RAVI;RADOSAVLJEVIC MARKO;DEWEY GILBERT;RAKSHIT TITASH;TSAI WILLMAN |
发明人 |
MAJHI PRASHANT;HUDAIT MANTU K.;KAVALIEROS JACK T.;PILLARISETTY RAVI;RADOSAVLJEVIC MARKO;DEWEY GILBERT;RAKSHIT TITASH;TSAI WILLMAN |
分类号 |
H01L29/15 |
主分类号 |
H01L29/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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