发明名称 |
SEMICONDUCTOR POWER DEVICE INTEGRATED WITH CLAMP DIODES HAVING DOPANT OUT-DIFFUSION SUPPRESSION LAYERS |
摘要 |
A semiconductor power device integrated with clamp diodes is disclosed by offering dopant out-diffusion suppression layers to enhance the ESD protection between gate and source, and avalanche capability between drain and source. |
申请公布号 |
US2013234237(A1) |
申请公布日期 |
2013.09.12 |
申请号 |
US201213417397 |
申请日期 |
2012.03.12 |
申请人 |
HSIEH FU-YUAN;FORCE MOS TECHNOLOGY CO. LTD. |
发明人 |
HSIEH FU-YUAN |
分类号 |
H01L27/06;H01L21/20 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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