SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

An electrode layer (16) lies on a silicon carbide substrate (90) in contact therewith and has Ni atoms and Si atoms. The number of Ni atoms is not less than 67% of the total number ofNi atoms and Si atoms. A side of the electrode layer (16) at least in contact with the silicon carbide substrate (90) contains a compound of Si and Ni. On a surface side of the electrode layer (16), C atom concentration is lower than Ni atom concentration. Thus, improvement in electrical conductivity of the electrode layer (16) and suppression of precipitation of C atoms at the surface of the electrode layer (16) can both be achieved.