发明名称 |
LIGHT EMITTING DIODE AND FORMING METHOD THEREOF |
摘要 |
<p>A light emitting diode (LED) and a forming method thereof are provided. The method for forming the LED includes: providing a semiconductor substrate (20) and a sapphire substrate (30) respectively, wherein a first bonding layer (21) is formed on the silicon substrate (20), and a sacrificial layer (32), an LED die (33) and a second bonding layer (35) are formed in turn on the sapphire substrate (30);bonding the first bonding layer (21) and the second bonding layer (35); removing the sacrificial layer (32) and lifting off the sapphire substrate (30). The method increases the effective lighting area of the LED, improves heat radiation, and enhances lighting efficiency.</p> |
申请公布号 |
EP2637221(A1) |
申请公布日期 |
2013.09.11 |
申请号 |
EP20110835460 |
申请日期 |
2011.02.10 |
申请人 |
ENRAYTEK OPTOELECTRONICS CO., LTD. |
发明人 |
XIAO, DEYUAN;CHANG, RICHARD RUGIN |
分类号 |
H01L33/00;H01L21/20;H01L33/12;H01L33/26;H01L33/38;H01L33/62;H01L33/64 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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