A SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF FORMING THE SAME

摘要

PURPOSE: A semiconductor memory device and a manufacturing method thereof are provided to prevent a leakage current by reducing the thickness of a bottom electrode through an etching process to increase a gap between adjacent bottom electrodes. CONSTITUTION: A first mold layer, a first support layer, a second mold layer, and a second support layer are successively formed on a substrate (100). A bottom electrode (250) passing through the first mold layer, the first support layer, the second mold layer, and the second support layer is formed on the substrate. A second support pattern (240) including a second opening part (245) is formed by patterning the second support layer. A part of the bottom electrode is exposed by removing the second mold layer. A part of the sidewall of the exposed bottom electrode is etched.