发明名称 METHOD FOR FORMING ISOLATION STRUCTURE
摘要 <p>To provide a method for forming an isolation structure having a low shrinkage percentage and a low tensile stress. [Means for solving] A first polysilazane composition containing a porogen is cast on the surface of a substrate to form a coat, and then the coat is fired to form a porous siliceous film having a refractive index of 1.3 or less. Thereafter, the surface of the porous siliceous film is soaked with a second polysilazane composition, and then fired to form an isolation structure of a siliceous film having a refractive index of 1.4 or more.</p>
申请公布号 EP2637203(A1) 申请公布日期 2013.09.11
申请号 EP20110838049 申请日期 2011.11.02
申请人 AZ ELECTRONIC MATERIALS (JAPAN) K.K. 发明人 NAKAMOTO NAOKO;SUZUKI KATSUCHIKA;SUGAHARA SHINJI;NAGAHARA TATSURO
分类号 H01L21/762;H01L21/3105;H01L21/316;H01L21/768;H01L23/522;H01L29/06 主分类号 H01L21/762
代理机构 代理人
主权项
地址