发明名称 |
METHOD FOR FORMING ISOLATION STRUCTURE |
摘要 |
<p>To provide a method for forming an isolation structure having a low shrinkage percentage and a low tensile stress. [Means for solving] A first polysilazane composition containing a porogen is cast on the surface of a substrate to form a coat, and then the coat is fired to form a porous siliceous film having a refractive index of 1.3 or less. Thereafter, the surface of the porous siliceous film is soaked with a second polysilazane composition, and then fired to form an isolation structure of a siliceous film having a refractive index of 1.4 or more.</p> |
申请公布号 |
EP2637203(A1) |
申请公布日期 |
2013.09.11 |
申请号 |
EP20110838049 |
申请日期 |
2011.11.02 |
申请人 |
AZ ELECTRONIC MATERIALS (JAPAN) K.K. |
发明人 |
NAKAMOTO NAOKO;SUZUKI KATSUCHIKA;SUGAHARA SHINJI;NAGAHARA TATSURO |
分类号 |
H01L21/762;H01L21/3105;H01L21/316;H01L21/768;H01L23/522;H01L29/06 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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