发明名称 |
Semiconductor device comprising a pixel unit including an auxiliary capacitor |
摘要 |
A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel unit is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an inter-layer insulation film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.
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申请公布号 |
US8530896(B2) |
申请公布日期 |
2013.09.10 |
申请号 |
US20090512173 |
申请日期 |
2009.07.30 |
申请人 |
YAMAZAKI SHUNPEI;ARAI YASUYUKI;KOYAMA JUN;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;ARAI YASUYUKI;KOYAMA JUN |
分类号 |
H01L29/00;G02F1/136;G02F1/1362;H01L21/77;H01L21/84;H01L27/12 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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