| 摘要 |
Perovskite semiconductor thin films and the method of making Perovskite semiconductor thin films are disclosed. Perovskite semiconductor thin films were deposited on inexpensive substrates such as glass and ceramics. CsSnI3 films contained polycrystalline domains with typical size of 300 nm and larger. It is confirmed experimentally that CsSnI3 compound in its black phase is a direct band-gap semiconductor, consistent with the calculated band structure from the first principles.
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