发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
An object is to provide a semiconductor device which solves a problem that can occur when a substrate having an insulating surface is used. The semiconductor device includes a base substrate having an insulating surface; a conductive layer over the insulating surface; an insulating layer over the conductive layer; a semiconductor layer having a channel formation region, a first impurity region, a second impurity region, and a third impurity region provided between the channel formation region and the second impurity region over the insulating layer; a gate insulating layer configured to cover the semiconductor layer; a gate electrode over the gate insulating layer; a first electrode electrically connected to the first impurity region; and a second electrode electrically connected to the second impurity region. The conductive layer is held at a given potential.
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申请公布号 |
US8530333(B2) |
申请公布日期 |
2013.09.10 |
申请号 |
US20100721298 |
申请日期 |
2010.03.10 |
申请人 |
ISOBE ATSUO;GODO HIROMICHI;SHINOHARA SATOSHI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ISOBE ATSUO;GODO HIROMICHI;SHINOHARA SATOSHI |
分类号 |
H01L21/46 |
主分类号 |
H01L21/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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