发明名称 |
Memory cell with improved retention |
摘要 |
A method for forming a device is presented. A substrate prepared with a feature having first and second adjacent surfaces is provided. A device layer is formed on the first and second adjacent surfaces of the feature. A first portion of the device layer over the first adjacent surface includes nano-crystals, whereas a second portion of the device layer over the second adjacent surface is devoid of nano-crystals.
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申请公布号 |
US8530310(B2) |
申请公布日期 |
2013.09.10 |
申请号 |
US20090650561 |
申请日期 |
2009.12.31 |
申请人 |
TEO LEE WEE;YIN CHUNSHAN;TAN SHYUE SENG;TAN CHUNG FOONG;LEE JAE GON;QUEK ELGIN;VERMA PURAKH RAJ;GLOBALFOUNDRIES SINGAPORE PTE. LTD. |
发明人 |
TEO LEE WEE;YIN CHUNSHAN;TAN SHYUE SENG;TAN CHUNG FOONG;LEE JAE GON;QUEK ELGIN;VERMA PURAKH RAJ |
分类号 |
H01L21/336;H01L29/788 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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