发明名称 |
Vertical devices and methods of forming |
摘要 |
Vertical devices and methods of forming the same are provided. One example method of forming a vertical device can include forming a trench in a semiconductor structure, and partially filling the trench with an insulator material. A dielectric material is formed over the insulator material. The dielectric material is modified into a modified dielectric material having an etch rate greater than an etch rate of the insulator material. The modified dielectric material is removed from the trench via a wet etch. |
申请公布号 |
US8530312(B2) |
申请公布日期 |
2013.09.10 |
申请号 |
US201113204763 |
申请日期 |
2011.08.08 |
申请人 |
FILIPPINI ANDREA;FERRARIO LUCA;MARIANI MARCELLO;MICRON TECHNOLOGY, INC. |
发明人 |
FILIPPINI ANDREA;FERRARIO LUCA;MARIANI MARCELLO |
分类号 |
H01L21/336;H01L21/28 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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