发明名称 Nonvolatile semiconductor integrated circuit for controlling sensing voltage
摘要 A nonvolatile semiconductor integrated circuit includes a memory cell array configured to include each of memory cells having a variable resistor; a current sensing unit configured to convert a current which depends on the variable resistor of a corresponding memory cell, into a sensing voltage; and a voltage control unit configured to receive the sensing voltage for a predetermined time in response to a sensing control signal, regulate the received sensing voltage, and provide a sensing output voltage.
申请公布号 US8531864(B2) 申请公布日期 2013.09.10
申请号 US20100844637 申请日期 2010.07.27
申请人 KIM DONG KEUN;SK HYNIX INC. 发明人 KIM DONG KEUN
分类号 G11C11/00 主分类号 G11C11/00
代理机构 代理人
主权项
地址