发明名称 CHARGED PARTICLE LITHOGRAPHY SYSTEM WITH ALIGNMENT SENSOR AND BEAM MEASUREMENT SENSOR.
摘要 A multi-beamlet charged particle beamlet lithography system for transferring a pattern to a surface of a substrate. The system comprises a projection system (311) for projecting a plurality of charged particle beamlets (7) onto the surface of the substrate; a chuck (313) moveable with respect to the projection system; a beamlet measurement sensor (i.a. 505, 511) for determining one or more characteristics of one or more of the charged particle beamlets, the beamlet measurement sensor having a surface (501) for receiving one or more of the charged particle beamlets; and a position mark measurement system for measuring a position of a position mark (610, 620, 635), the position mark measurement system comprising an alignment sensor (361, 362). The chuck comprises a substrate support portion for supporting the substrate, a beamlet measurement sensor portion (460) for accommodating the surface of the beamlet measurement sensor, and a position mark portion (470) for accommodating the position mark.
申请公布号 NL2010409(A) 申请公布日期 2013.09.10
申请号 NL20132010409 申请日期 2013.03.08
申请人 MAPPER LITHOGRAPHY IP B.V. 发明人 SCHEFFERS PAUL IJMERT;MEIJER JAN ANDRIES;SLOT ERWIN;KUIPER VINCENT SYLVESTER;VERGEER NIELS
分类号 H01J37/317;H01L21/68 主分类号 H01J37/317
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