发明名称 Apparatus and method for wafer level fabrication of high value inductors on semiconductor integrated circuits
摘要 An apparatus and method for wafer level fabrication of high value inductors directly on top of semiconductor integrated circuits. The apparatus and method includes fabricating a semiconductor wafer including a plurality of dice, each of the dice including power circuitry and a switching node. Once the wafer is fabricated, then a plurality of inductors are fabricated directly onto the plurality of dice on the wafer respectively. Each inductor is fabricated by forming a plurality of magnetic core inductor members on an interconnect dielectric layer formed on the wafer. An insulating layer, and then inductor coils, are then formed over the plurality of magnetic core inductor members over each die. A plated magnetic layer is formed over the plurality of inductors respectively to raise the permeability and inductance of the structure.
申请公布号 US8531002(B2) 申请公布日期 2013.09.10
申请号 US20100899384 申请日期 2010.10.06
申请人 HOPPER PETER J.;JOHNSON PETER;HWANG KYUWOON;PAPOU ANDREI;NATIONAL SEMICONDUCTOR CORPORATION 发明人 HOPPER PETER J.;JOHNSON PETER;HWANG KYUWOON;PAPOU ANDREI
分类号 H01L27/08 主分类号 H01L27/08
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