发明名称 Drop discharge apparatus, method for forming pattern and method for manufacturing semiconductor device
摘要 In this invention, it provides a method for forming a pattern, which is capable of improving position control after a drop, which was discharged from a drop discharge apparatus, was landed on a substrate. In addition, it provides a drop discharge apparatus which is capable of improving drop position accuracy after it was landed. Further, it provides a method for manufacturing a semiconductor device which uses the drop discharge apparatus of this invention. This invention is characterized in that a drop which was discharged from a discharge part, or a substrate on which a drop is landed, is irradiated with a laser beam, and a landing position of a drop is controlled. By this invention, it is possible to form a pattern, without using a photolithography process.
申请公布号 US8528497(B2) 申请公布日期 2013.09.10
申请号 US20090553274 申请日期 2009.09.03
申请人 NAKAMURA OSAMU;YAMAZAKI SHUNPEI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 NAKAMURA OSAMU;YAMAZAKI SHUNPEI
分类号 B05B5/00;B05B3/00;B05B9/06;B05C5/00;C23C14/00;H01L21/288;H01L21/336;H01L21/768;H01L21/77;H01L21/84;H01L27/12 主分类号 B05B5/00
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