发明名称 |
Method of BARC removal in semiconductor device manufacturing |
摘要 |
A method of removing a high molecular weight organic-comprising hard mask or BARC from a surface of a porous low k dielectric material, where a change in the dielectric constant of the low k dielectric material is less than about 5% after application of the method. The method comprises exposing the organic-comprising hard mask or BARC to nitric acid vapor which contains at least 68% by mass HNO3.
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申请公布号 |
US8530356(B2) |
申请公布日期 |
2013.09.10 |
申请号 |
US201113317084 |
申请日期 |
2011.10.07 |
申请人 |
GOUK ROMAN;VERHAVERBEKE STEVEN;CHEN HAN-WEN;APPLIED MATERIALS, INC. |
发明人 |
GOUK ROMAN;VERHAVERBEKE STEVEN;CHEN HAN-WEN |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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