发明名称 |
Semiconductor device having split gate type, non-volatile memory cells and a method of manufacturing the same |
摘要 |
A semiconductor device having a non-volatile memory is disclosed, whose disturb defect can be diminished or prevented. A memory cell of the non-volatile memory has a memory gate electrode formed over a main surface of a semiconductor substrate through an insulating film for charge storage. A first side wall is formed on a side face of the memory gate electrode, and at a side face of the first side wall, a second side wall is formed. On an upper surface of an n+-type semiconductor region for source in the memory cell there is formed a silicide layer whose end portion on the memory gate electrode MG side is defined by the second side wall.
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申请公布号 |
US8530958(B2) |
申请公布日期 |
2013.09.10 |
申请号 |
US20100718002 |
申请日期 |
2010.03.05 |
申请人 |
TOBA KOICHI;ISHII YASUSHI;KAWASHIMA YOSHIYUKI;MACHIDA SATORU;NAKAGAWA MUNEKATSU;SAITO KENTARO;MATSUI TOSHIKAZU;HASHIMOTO TAKASHI;OKUYAMA KOSUKE;RENESAS ELECTRONICS CORPORATION |
发明人 |
TOBA KOICHI;ISHII YASUSHI;KAWASHIMA YOSHIYUKI;MACHIDA SATORU;NAKAGAWA MUNEKATSU;SAITO KENTARO;MATSUI TOSHIKAZU;HASHIMOTO TAKASHI;OKUYAMA KOSUKE |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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