发明名称 Photoresist composition
摘要 The present invention provides a photoresist composition having a sulfonium salt comprising an anion represented by the formula (IA): wherein R1 and R2 independently represent a hydrogen atom, a C1-C12 aliphatic hydrocarbon group, a C3-C20 saturated cyclic hydrocarbon group, a C6-C20 aromatic hydrocarbon group or a C7-C21 aralkyl group, and the aliphatic hydrocarbon group, the saturated cyclic hydrocarbon group, the aromatic hydrocarbon group and the aralkyl group can have one or more substituents selected from the group consisting of a hydroxyl group, a cyano group, a fluorine atom, a trifluoromethyl group and a nitro group, and one or more -CH2- in the aliphatic hydrocarbon group can be replaced by -O- or -CO-, or R1 and R2 are bonded each other to form a C4-C20 nitrogen-containing ring together with the nitrogen atom to which they are bonded, an acrylic resin having an acid-labile group and being insoluble or poorly soluble in an aqueous alkali solution but becoming soluble in an aqueous alkali solution by the action of an acid, and an acid generator.
申请公布号 US8530137(B2) 申请公布日期 2013.09.10
申请号 US201113025876 申请日期 2011.02.11
申请人 MASUYAMA TATSURO;YAMAGUCHI SATOSHI;SUMITOMO CHEMICAL COMPANY, LIMITED 发明人 MASUYAMA TATSURO;YAMAGUCHI SATOSHI
分类号 G03F7/004;G03F7/20;G03F7/30;G03F7/38 主分类号 G03F7/004
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