发明名称 |
Nitride shallow trench isolation (STI) structures and methods for forming the same |
摘要 |
A shallow trench isolation (STI) structure and methods for forming the same provide an STI structure with a top surface formed completely of silicon nitride. The methods for forming the STI structures provide for at least one nitride deposition step followed by a further nitride deposition step to re-fill divots that occur along the upper portions of the trench sidewalls.
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申请公布号 |
US8530327(B2) |
申请公布日期 |
2013.09.10 |
申请号 |
US201113222698 |
申请日期 |
2011.08.31 |
申请人 |
PIPER DANIEL;CHIANG FRANKLIN;YERUBANDI GANESH;WAFERTECH, LLC |
发明人 |
PIPER DANIEL;CHIANG FRANKLIN;YERUBANDI GANESH |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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