发明名称 |
Stress modulation for metal gate semiconductor device |
摘要 |
The present disclosure provides a method of semiconductor device fabrication including removing a sacrificial gate structure formed on a substrate to provide an opening. A metal gate structure is then formed in the opening. The forming of the metal gate structure includes forming a first layer (including metal) on a gate dielectric layer, wherein the first layer includes a metal and performing a stress modulation process on the first layer. The stress modulation process may include ion implantation of a neutral species such as silicon, argon, germanium, and xenon. |
申请公布号 |
US8530294(B2) |
申请公布日期 |
2013.09.10 |
申请号 |
US201113278725 |
申请日期 |
2011.10.21 |
申请人 |
LEE WEI-YANG;CHAN MENG-HSUAN;YU HUANG CHING;LEE DA-YUAN;HSU KUANG-YUAN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LEE WEI-YANG;CHAN MENG-HSUAN;YU HUANG CHING;LEE DA-YUAN;HSU KUANG-YUAN |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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