发明名称 Method for testing through-silicon-via and the circuit thereof
摘要 The method and circuit for testing a TSV of the present invention exploit the electronic property of the TSV under test. The TSV under test is first reset to a first state, and is then sensed at only one end to determine whether the TSV under test follows the behavior of a normal TSV, wherein the reset and sense steps are performed at only one end of the TSV under test. If the TSV under test does not follow the behavior of a normal TSV, the TSV under test is determined faulty.
申请公布号 US8531199(B2) 申请公布日期 2013.09.10
申请号 US20100775367 申请日期 2010.05.06
申请人 WU CHENG WEN;CHEN PO YUAN;KWAI DING MING;CHOU YUNG FA;NATIONAL TSING HUA UNIVERSITY 发明人 WU CHENG WEN;CHEN PO YUAN;KWAI DING MING;CHOU YUNG FA
分类号 G01R31/02;G01R31/26 主分类号 G01R31/02
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