| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical MOS transistor capable of achieving high integration and high performance, and a method for manufacturing the same.SOLUTION: A semiconductor device includes a circuit to which a drain or a source of a first MOS transistor Qp11 and a drain or a source of a second MOS transistor Qn11 are connected. The first MOS transistor Qp11 includes a first drain/source region 4, a columnar semiconductor layer 6a, a second source/drain region 10a and a gate 8b formed on the side wall of the columnar semiconductor layer. The second MOS transistor Qn11 includes a third drain/source region 3, a columnar semiconductor layer 5, a fourth source/drain region 12 and a gate 8 formed on the side wall of the columnar semiconductor layer. In the semiconductor device, a silicide layer 11 is formed which connects the first drain/source region 4 and the third drain/source region 3. |
