发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which is unlikely to be damaged even when stress is locally applied from outside; and provide a method of manufacturing a semiconductor device with high yield, which has high nondestructive reliability against local stress from outside.SOLUTION: A semiconductor device in which an element layer and a structure including a high strength fiber of an organic compound or of an inorganic compound which is impregnated with an organic resin are fastened is manufactured by providing the structure including the high strength fiber of the organic compound or of the inorganic compound which is impregnated with the organic resin on the element layer having the semiconductor element formed by using an amorphous semiconductor layer, and by performing thermal pressure bonding.
申请公布号 JP2013179358(A) 申请公布日期 2013.09.09
申请号 JP20130120773 申请日期 2013.06.07
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 SUGIYAMA EIJI;MICHIMAE YOSHITAKA;OTANI HISASHI;TSURUME TAKUYA
分类号 H01L21/02;G06K19/07;G06K19/077;H01L27/12 主分类号 H01L21/02
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