| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-output array type semiconductor laser device capable of securing stability, uniformity and high reliability of a characteristic by reducing thermal interference of plural adjacent active regions, and a manufacturing method thereof.SOLUTION: An array type semiconductor laser device 70 according to the present invention comprises: an n-type clad layer 22 and active layer 23 formed on a substrate 21; a p-type clad layer 24 sandwiching the active layer 23 together with the n-type clad layer 22; a current constriction membrane 27 having a stripe-like opening 26 only at an upper part of the active region 25; and a heat radiation section 28 made of a stripe-like metallic bar at least at an upper part and a lower part of the opening 26 of the current constriction membrane 27 and the active region 25, on the substrate 21 on which a step 72 is formed. Positions of plural adjacent emitters 29 in a lamination direction including the active layer 23 are offset from each other, so as to emit laser light from the plural emitters 29. |
