发明名称 LEVEL SHIFT CIRCUIT
摘要 PROBLEM TO BE SOLVED: To reduce a through current flowing through a circuit in response to input signal switching.SOLUTION: The level shift circuit includes: a first pair of transistors (M1, M4) of a first conductivity type having respective sources connected to a pair of input nodes (in, inB), respectively, and respective gates connected to a first power supply (GND) in common; a second pair of transistors (M2, M5) of a second conductivity type having respective drains connected to respective drains of the first pair of transistors and respective gates connected to the first power supply in common; a third pair of transistors (M3, M6) of the second conductivity type having respective drains connected to respective sources of the second pair of transistors, gates and drains connected crosswise and respective sources connected to a second power supply (V2) in common; and a pair of capacitive elements (C1, C2) having respective ends connected to the pair of input nodes, respectively, and the other ends connected to the respective drains of the third pair of transistors.
申请公布号 JP2013179571(A) 申请公布日期 2013.09.09
申请号 JP20120278163 申请日期 2012.12.20
申请人 RENESAS ELECTRONICS CORP 发明人 MATSUNO NORIO;MARUYAMA TATSUHIKO
分类号 H03K19/0185;H01L21/8234;H01L21/8238;H01L27/06;H01L27/092 主分类号 H03K19/0185
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