METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND GROUP III NITRIDE SEMICRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method capable of producing an excellent group III nitride crystal having reduced impurities, suitable especially for electronic device application or the like, and having few vacancy type defects.SOLUTION: In a method for producing a group III nitride crystal by introducing group III raw material gas G3 and group V raw material gas G4 into a crystal growth furnace 100 from a raw material gas introduction port and growing a group III nitride crystal, an impurity filter is provided at least on a part of the raw material gas introduction port. The impurity filter is one of linear, lattis-shaped, striped or porous ones.