| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor processing apparatus which can heat an SiC substrate to a high temperature while suppressing damage on the SiC substrate.SOLUTION: A semiconductor processing apparatus 100 includes an actuator 2, a plasma source 10, a susceptor 50, rotary means 60, and moving means 70. The plasma source 10 is secured to a frame 1 via an actuator 2. The plasma source 10 generates a thermal plasma jet, with which a wafer 90 consisting of SiC crystal is irradiated. The susceptor 50 supports the wafer 90. The rotary means 60 rotates the susceptor 50 about an axis X at an angular speed ω. The moving means 70 moves the susceptor 50 in the horizontal direction DR1(=radial direction of the wafer 90). |
