发明名称 METHOD FOR MANUFACTURING GRAPHENE STRUCTURE
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a graphene structure having a graphene film of a desired film thickness.SOLUTION: A graphene layer 5 is formed by successively layering an insulating film layer 3 containing at least silicon, and a catalyst metal layer 4 on a predetermined substrate 2, and supplying carbon in a plasma state onto the resultant substrate by using the arc plasma discharge which is pulse-controlled under high degree of vacuum and high temperature.
申请公布号 JP2013177659(A) 申请公布日期 2013.09.09
申请号 JP20120042599 申请日期 2012.02.29
申请人 NAGOYA INSTITUTE OF TECHNOLOGY 发明人 EGAWA TAKASHI;FUJITA KAZUHISA
分类号 C23C14/06;C01B31/02 主分类号 C23C14/06
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