发明名称 |
METHOD FOR MANUFACTURING GRAPHENE STRUCTURE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a graphene structure having a graphene film of a desired film thickness.SOLUTION: A graphene layer 5 is formed by successively layering an insulating film layer 3 containing at least silicon, and a catalyst metal layer 4 on a predetermined substrate 2, and supplying carbon in a plasma state onto the resultant substrate by using the arc plasma discharge which is pulse-controlled under high degree of vacuum and high temperature. |
申请公布号 |
JP2013177659(A) |
申请公布日期 |
2013.09.09 |
申请号 |
JP20120042599 |
申请日期 |
2012.02.29 |
申请人 |
NAGOYA INSTITUTE OF TECHNOLOGY |
发明人 |
EGAWA TAKASHI;FUJITA KAZUHISA |
分类号 |
C23C14/06;C01B31/02 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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