| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device with a minute pattern is provided to minimize the change of a process due to an oxide layer naturally generated in a trimming process after an insulating layer is removed. CONSTITUTION: A silicon layer is formed on a substrate(S110). A photoresist layer is formed in the upper part of the silicon layer(S120). The photoresist layer is exposed(S130). The exposed photoresist layer is developed(S140). A pattern is formed in the silicon layer(S150). The photoresist layer is removed(S160). An insulating layer is formed(S170). A part of the insulating layer is removed(S180). The pattern formed on the silicon substrate is trimmed(S190). [Reference numerals] (AA) Start; (BB) End; (S110) Form a silicon layer on a substrate; (S120) Form a photoresist layer in the upper part of the silicon layer; (S130) Expose the photoresist layer; (S140) Develop the photoresist layer; (S150) Form a pattern on the photoresist layer; (S160) Remove the photoresist layer; (S170) Form an insulating layer; (S180) Remove a part of the insulating layer; (S190) Trim the pattern |
