| 摘要 |
PROBLEM TO BE SOLVED: To provide a circuit layout which can be reduced in size and which has high degree of freedom in wiring connection.SOLUTION: A semiconductor device comprises: a first region composed of a first and a second region; a first transistor having a first and a second diffusion region and a first control gate formed in the surface of the first region within the first region; a second transistor having a third and a fourth diffusion region and a second control gate formed in the surface of the first region within the second region; a first wiring layer formed on the first and the second control gates along the longer direction of the gates across the first region and the second region; and a first plug CP 2 formed on the first control gate. The first plug is formed in a different region than a region in which the first wiring layer is formed. |
