| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile 1T memory capable of writing and erasing data at a low voltage.SOLUTION: There is provided a semiconductor device comprising: a fin 3 formed on a semiconductor substrate 1; a piezoelectric element 5 configured to apply a stress to the fin 3; a gate electrode G configured to apply a voltage to the fin 3 and the piezoelectric element 5; and a source layer S and a drain layer D formed in the fin 3 so as to interpose a channel region formed in the fin 3. |
