| 摘要 |
PROBLEM TO BE SOLVED: To realize the downsizing of pixels and the lowering of voltages applied to a multiplication gate electrode in a solid state image pickup element incorporating a multiplication unit.SOLUTION: The solid state image pickup element includes, as pixels, a photoelectric conversion part formed on the surface on one side of a semiconductor substrate, a charge retention part for accumulating charges generated in the photoelectric conversion part, and a multiplication gate electrode formed so as to couple capacitances in a portion where the charge retention part is formed. Further, at a position on the surface on the one side of the semiconductor substrate and between the charge retention part and the one side, at which position capacitance is coupled with the multiplication gate electrode, it includes a charge barrier part having a higher impurity concentration than the semiconductor substrate. |
