发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem that data duplication and the addition of an energy storage function make it difficult to increase the area of a semiconductor device and to secure required power consumption even though the normality/abnormality of data recorded to normally operate a reactivated system is required to be recorded in a semiconductor device in the case that power supply fed to the semiconductor device is shut off during writing operation of a nonvolatile memory cell.SOLUTION: The semiconductor device includes a first selection circuit (XDEC_R) and a second selection circuit (YSEL) for selecting a nonvolatile memory cell of a memory cell array (MA), and a voltage monitoring circuit (V_DTC) for detecting power shutdown to output a monitor signal (ERR_DTC). The second selection circuit switches writing of the nonvolatile memory cell from electron injection by tunnel current to electron injection by a hot electron in response to the monitor signal.
申请公布号 JP2013178865(A) 申请公布日期 2013.09.09
申请号 JP20120043089 申请日期 2012.02.29
申请人 RENESAS ELECTRONICS CORP 发明人 YOSHIDA HIROSHI;ISHIDA NAONOBU;SATO HIROSHI;BANDO TATSUYA
分类号 G11C16/02;G11C16/04 主分类号 G11C16/02
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