| 摘要 |
A far-infrared plane heater 6 is placed in a closed-container-shaped device body 3 of an oxidation annealing device 1, an oxygen addition gas feed pipe 8 through which an oxygen addition gas containing water vapor and oxygen is fed into the device body 3 is connected to a gas exhaust pipe 11 through which gas in the device body 3 is discharged, and jet nozzles 16 through which the oxygen addition gas containing water vapor and oxygen is ejected to an oxygen-deficient portion of a substrate 50 are brought into communication with the oxygen addition gas feed pipe 8. This allows oxidation annealing of a large substrate at high throughput and low cost while preventing a leakage current.
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