| 摘要 |
PURPOSE: A GaAs(Gallium arsenide) ingot manufacturing device is provided to improve efficiency of a GaAs ingot having suitable matter property as the substrate of a light emitting diode. CONSTITUTION: A space unit(11) is formed inside a crystal growing container(10). The crystal growing container is formed into a hollow form. A reaction container(20) revolves in a counterclockwise direction by a crucible rotation shaft(C). A seed crystal rotary shaft(15) which revolves in a clockwise direction is located at the upper side of the reaction container. A structure supports the reaction container. A resistance heater(40) is formed into a cylindrical type and surrounds the reaction container. A heat insulation unit(50) prevents heat radiated in the resistance heater to be diffused toward the inner wall of the crystal growing container. |
