| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a light-emitting diode capable of performing alloying heat treatment simultaneously for a p-type electrode layer and an n-type electrode layer in a temperature region whose temperature is lower than ever before.SOLUTION: A method for manufacturing a light-emitting diode 100 having a compound semiconductor layer 30 provided with a p-type semiconductor layer 10 at one end and an n-type semiconductor layer 1 at the other end, and including a light-emitting layer 7 between the p-type semiconductor layer 10 and the n-type semiconductor layer 1 comprises the steps of: forming a p-type electrode layer 12 composed of a material containing Au, Be, and Ni on the p-type semiconductor layer 10 and forming an n-type electrode layer 13 composed of a material containing Au, Ge, and Ni on the n-type semiconductor layer 1; and performing alloying heat treatment simultaneously for the p-type electrode layer 12 and the n-type electrode layer 13. Alloying heat treatment is performed in a temperature range in which both the p-type electrode layer 12 and the n-type electrode layer 13 are brought into an ohmic contact state. |
