| 摘要 |
PROBLEM TO BE SOLVED: To provide an SiC single crystal in which dislocation density is 1×10cmor less and to which an impurity is added, and to provide a method for producing the SiC single crystal.SOLUTION: After an SiC single crystal with dislocation density of 5×10cmor less is obtained by repeating an ELO method two or more times, the SiC single crystal is used as a seed crystal 4 and the mixed powder of SiC polycrystal powder and an impurity is used as a raw material 6, and an impurity-doped SiC single crystal 3 with dislocation density of 1×10cmor less is obtained by a vapor phase or a solution growth method. |
