发明名称 SURFACE MODIFICATION METHOD OF OPTICAL ELEMENT SEALANT AND LIGHT-EMITTING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a surface modification method providing high luminous efficiency and sulfurization-resistance in optical uses and to provide a light-emitting semiconductor device.SOLUTION: There is provided a surface modification method of modifying a surface of an optical element sealant, in which the surface of the optical element sealant is modified by laminating a methane plasma coating layer formed by plasma polymerization using methane on the surface of the optical element sealant.
申请公布号 JP2013179124(A) 申请公布日期 2013.09.09
申请号 JP20120041279 申请日期 2012.02.28
申请人 SHIN ETSU CHEM CO LTD 发明人 IKENO MASAYUKI;AKEDA TAKASHI;KOUCHI SATOSHI;KOZAI TOSHIYUKI
分类号 H01L33/52 主分类号 H01L33/52
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