| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element that allows high performance of an optical semiconductor element under high temperatures.SOLUTION: A semiconductor device of the present invention includes: a buffer layer formed on a GaAs substrate; a lattice relaxation layer formed on the buffer layer and having an In composition ranging from 5 to 30%; a lower cladding layer formed on the lattice relaxation layer; a quantum well active layer formed on the lower cladding layer; a carrier stopper layer formed on the quantum well active layer and composed of InAlGaAs; and an upper cladding layer composed of InGaP. The lower cladding layer and the upper cladding layer have a refractive index lower than that of the quantum well active layer. The upper cladding layer is formed so that the carrier stopper layer is sandwiched by the quantum well active layer and the upper cladding layer. |
