发明名称 LAYERED SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a layered semiconductor device which has a high spatial packaging density and which requires a highly efficient heat dissipation structure for a stable operation.SOLUTION: A layered semiconductor device comprises a plurality of semiconductor chips each including a circuit region, first bumps which are electrically connected to elements in the circuit region, and second bumps which form a pattern surrounding the circuit region and which are not electrically connected to the elements in the circuit region. The plurality of semiconductor chips are layered in such a manner that at least parts of the first bump groups which are opposed to each other are bonded and at least parts of the second bump groups which are opposed to each other are bonded.
申请公布号 JP2013179373(A) 申请公布日期 2013.09.09
申请号 JP20130129644 申请日期 2013.06.20
申请人 NIKON CORP 发明人 MATSUOKA SHINGO
分类号 H01L25/065;H01L21/60;H01L25/07;H01L25/18 主分类号 H01L25/065
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