| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for producing a crystal capable of taking out a III group element nitride crystal such as a GaN single crystal formed by liquid phase growth from a raw material liquid in a short time.SOLUTION: A crucible is put in a treating container, and a solid raw material-treating liquid 8 is poured into the treating container 7 before a crucible 1 is put in the treating container 7, or after putting it in. The crucible 1 is cut at a part to be cut while a seed substrate 2 supported by a seed substrate supporter 3, a crystal substrate 10 grown on the seed substrate 2, and a solid raw material 4 covering these seed substrate 2 and the crystal substrate 10 are housed in the crucible 1. |
