发明名称 PRECURSOR COMPOSITION, METHOD FOR DELIVERING PRECURSOR COMPOSITION, AND METHOD FOR FORMING LEAD ZIRCONATE TITANATE (PZT) FILM
摘要 PROBLEM TO BE SOLVED: To provide a lead zirconate titanate (PZT) material having unique properties and applicability to a PZT thin film capacitor, for example, a ferroelectric capacitor structure such as FeRAMs.SOLUTION: A PZT material is scalable, that is, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, for example, from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. The scalable PZT material may be formed by liquid delivery MOCVD without PZT film modification techniques such as a material acceptor dopant such as Nb, Ta, La, Sr, and Ca or film modifiers.
申请公布号 JP2013177697(A) 申请公布日期 2013.09.09
申请号 JP20130125830 申请日期 2013.06.14
申请人 ADVANCED TECHNOLOGY MATERIALS INC 发明人
分类号 C23C16/40;C04B35/491;H01B3/00;H01B3/12;H01G4/12;H01G4/33;H01L21/314;H01L21/316;H01L21/3205;H01L21/768;H01L21/8242;H01L21/8246;H01L23/52;H01L23/522;H01L27/105;H01L27/115 主分类号 C23C16/40
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