| 摘要 |
PROBLEM TO BE SOLVED: To provide an image sensor which does not require a metal reflection layer separately while having a backside illumination structure, and can improve photosensitivity and cross torque for short wavelength, by controlling the depletion region of a photodiode.SOLUTION: The backside illumination image sensor includes a photodiode formed under the surface of a semiconductor substrate, and irradiated with light from the backside thereof to generate optical charges, a reflection gate formed on the photodiode above the surface of the semiconductor substrate, reflecting the backside illumination light and being applied with a bias for controlling the depletion region of the photodiode, and a transfer gate for transmitting optical charges from the photodiode to the sense node of a pixel. |
