| 摘要 |
<p>PURPOSE: A thin film transistor substrate and a method for fabricating the same are provided to improve image defects by reducing parasitic capacitance. CONSTITUTION: An etch stopper (118) protects an oxide semiconductor layer. The etch stopper is defined by the length of a gate electrode. An interlayer dielectric (132) includes a source contact hole and a drain contact hole. A source and a drain electrode (108,110) are connected to the oxide semiconductor layer. A pixel electrode (122) is connected to the drain electrode of a thin film transistor.</p> |
