| 摘要 |
A power field-effect transistor having a substrate (115) and an epitaxial layer (120) of a first conductivity type thereon, first and second base regions of the second conductivity type within the epitaxial layer, respective source regions (125) of a first conductivity type arranged within said base regions, and an insulated gate structure (130) covering at least partly, and arranged above an epitaxial layer portion between, said base regions. A drain contact (135) extends in a hole (137) or trench from a top of the epitaxial layer towards the substrate to couple a top contact (110) with said substrate. An implant region (145) may be provided below said hole or trench to link the substrate to the drain contact if the hole or trench does not extend to the substrate. |
