发明名称 |
METHOD FOR CUTTING SILICON INGOT |
摘要 |
<p>[Problem] To provide a method that is for cutting a silicon ingot and that, without using an abrasive grit, can efficiently cut a silicon ingot by means of a simple process, and that can cause a silicon wafer to become a thin film and to have reduced damage to the surface thereof. [Solution] In the method for cutting a silicon ingot, which cuts a silicon ingot by causing a metal wire (4) to travel while pressing against the silicon ingot (2) in the state of supplying etching liquid (6) to the metal wire (4), the metal wire is heated by means of electric heating.</p> |
申请公布号 |
WO2013128688(A1) |
申请公布日期 |
2013.09.06 |
申请号 |
WO2012JP72915 |
申请日期 |
2012.09.07 |
申请人 |
CRYSTAL OPTICS CO., LTD;TOOL BANK EAST CO., LTD;THE RITSUMEIKAN TRUST;MURATA JUNJI;KIRINO OKIHARU |
发明人 |
MURATA JUNJI;KIRINO OKIHARU |
分类号 |
H01L21/304;B24B27/06;B28D5/04 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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